The Vermont Gallium Nitride Tech Hub has officially opened a new Test and Characterization Facility, a major addition to the nation’s growing microelectronics innovation ecosystem and a critical resource for accelerating the transition of advanced semiconductor technologies from development to commercial deployment. The facility is located in South Burlington, Vermont.
The V-GaN Tech Hub is a federally designated Economic Development Administration Tech Hub founded by the University of Vermont, the State of Vermont, and GlobalFoundries. Its mission is to accelerate the commercialization of gallium nitride semiconductor technologies and establish the Northeastern United States as a leading destination for next-generation microelectronics innovation. Gallium nitride semiconductors enable high-performance electronic systems, allowing products to operate at higher voltages and frequencies while generating less heat compared to conventional silicon-based technologies, with applications spanning motor controllers, data center power systems, battery management technologies, electric power inverters, radar systems, and wireless communications infrastructure.
The Test and Characterization facility is funded by the Northeast Microelectronics Coalition, a division of the Massachusetts Technology Collaborative and one of eight regional hubs within the Microelectronics Commons program. As the first publicly accessible facility of its kind in the US, it provides V-GaN Tech Hub and NEMC members access to state-of-the-art equipment and dedicated engineering expertise, with staff helping companies define objectives, develop test plans, conduct evaluations, and interpret results.
High-power device testing equipment is already on site, with services available to members beginning in August 2026. High-frequency testing capabilities are scheduled to come online in early 2027, expanding support for advanced communications, radar, and other radio-frequency applications. The facility is staffed by a full-time test engineer and is intended to lower barriers to access for companies working to bring breakthrough microelectronics technologies to market.
KEY QUOTES:
“This facility was designed with input from semiconductor developers across our region to provide resources for high power testing capabilities that are currently inaccessible to innovators. We expect the lab to accelerate the application and innovation of wide bandgap microelectronics across the nation.”
Doug Merrill, UVM Tech Hub Regional Innovation Officer
“No single organization can address the region’s microelectronics challenges alone. The opening of the V-GaN Test and Characterization Facility demonstrates what can be accomplished when regional coalitions jointly collaborate with industry, academia and government. This facility adds critical capabilities to our network, enabling innovators to transition high-power and RF innovations faster from prototype to production.”
Mark Halfman, Director, NEMC
